C67078-S3126-A2 查看數據表（PDF） - Siemens AG
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C67078-S3126-A2 Datasheet PDF : 9 Pages
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BUZ 338
Typ. output characteristics
ID = ƒ(VDS)
parameter: tp = 80 µs
30
A
Ptot
=
180Wl
j
k
i
h
g
f
e
26
ID
24
22
20
18
16
14
12
10
8
6
dVGS [V]
a 4.0
b 4.5
c 5.0
d 5.5
c e 6.0
f 6.5
g 7.0
h 7.5
i 8.0
j 9.0
k 10.0
b
l 20.0
4
a
2
0
0
4
8 12 16 20 V 28
VDS
Typ. transfer characteristics ID = f (VGS)
parameter: tp = 80 µs
VDS≥2 x ID x RDS(on)max
15
A
13
ID
12
11
10
9
8
7
6
5
4
3
2
1
0
0 1 2 3 4 5 6 7 8 V 10
VGS
Typ. drain-source on-resistance
RDS (on) = ƒ(ID)
parameter: VGS
1.3
Ω
a
1.1
RDS (on) 1.0
b
c
0.9
0.8
0.7
0.6
0.5
d
e
0.4
0.3
f
h
j
g
i
k
0.2 VGS [V] =
0.1
abc def
4.05 5.0 5.5 6.0 6.5 7.0
0.0
ghi j k
7.5 8.0 9.0 10.0 20.0
0
4
8 12 16 20 A 28
ID
Typ. forward transconductance gfs = f (ID)
parameter: tp = 80 µs,
VDS≥2 x ID x RDS(on)max
20
S
gfs
16
14
12
10
8
6
4
2
0
0
2
4
6
8 10 A 14
ID
Semiconductor Group
6
07/96
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