C67078-S3126-A2 查看數據表（PDF） - Siemens AG
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C67078-S3126-A2 Datasheet PDF : 9 Pages
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BUZ 338
Avalanche energy EAS = ƒ(Tj)
parameter: ID = 13.5 A, VDD = 50 V
RGS = 25 Ω, L = 9.18 mH
1000
mJ
EAS 800
700
600
500
400
300
200
100
0
20 40 60 80 100 120 °C 160
Tj
Drain-source breakdown voltage
V(BR)DSS = ƒ(Tj)
Typ. gate charge
VGS = ƒ(QGate)
parameter: ID puls = 20 A
16
V
VGS
12
10
0,2 VDS max
0,8 VDS max
8
6
4
2
0
0 20 40 60 80 100 120 140 160 nC 190
QGate
600
V
580
V(BR)DSS570
560
550
540
530
520
510
500
490
480
470
460
450
-60
-20
20
60
100 °C 160
Tj
Semiconductor Group
8
07/96
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