BUZ 70 L
Typ. output characteristics
ID = ƒ(VDS)
parameter: tp = 80 µs
28 Ptot = 40W
A
24
ID
22
20
18
16
14
12
10
8
6
lkj i h g
VGS [V]
a 2.5
b 3.0
f
c 3.5
d 4.0
e 4.5
ef
5.0
g 5.5
h 6.0
di
7.0
j
8.0
k 9.0
c l 10.0
4
b
2
0
a
0.0 1.0 2.0 3.0 4.0 5.0 V 6.5
VDS
Typ. drain-source on-resistance
RDS (on) = ƒ(ID)
parameter: VGS
0.45 a
b
c
d
e
Ω
RDS (on)0.35
0.30
0.25
0.20
0.15
0.10
f
g
h
j
ik
0.05
VGS [V] =
ab
c
d
e
f
ghi
j
k
23.50 3.5 4.0 4.5 5.0 5.5 6.0 7.0 8.0 9.0 10.0
0.00
0
4
8
12
16
A
24
ID
Typ. transfer characteristics ID = f (VGS)
parameter: tp = 80 µs
VDS≥2 x ID x RDS(on)max
30
A
26
ID
24
22
20
18
16
14
12
10
8
6
4
2
0
0 1 2 3 4 5 6 7 8 V 10
VGS
Typ. forward transconductance gfs = f (ID)
parameter: tp = 80 µs,
VDS≥2 x ID x RDS(on)max
10
S
gfs
8
7
6
5
4
3
2
1
0
0
4
8 12 16 20 A 28
ID
Semiconductor Group
6
07/96