C67078-S3127-A2 查看數據表（PDF） - Infineon Technologies

零件编号

产品描述 (功能)

生产厂家

C67078-S3127-A2

SIPMOS® Power Transistor

Infineon Technologies 

BUZ 323

Electrical Characteristics, at Tj = 25°C, unless otherwise specified

Parameter

Static Characteristics

Drain- source breakdown voltage

VGS = 0 V, ID = 0.25 mA, Tj = 25 °C

Gate threshold voltage

VGS=VDS, ID = 1 mA

Zero gate voltage drain current

VDS = 400 V, VGS = 0 V, Tj = 25 °C

VDS = 400 V, VGS = 0 V, Tj = 125 °C

Gate-source leakage current

VGS = 20 V, VDS = 0 V

Drain-Source on-resistance

VGS = 10 V, ID = 9.5 A

Symbol

min.

Values

Unit

typ.

max.

V(BR)DSS

V

400

-

-

VGS(th)

2.1

3

4

IDSS

-

µA

0.1

1

-

10

100

IGSS

-

nA

10

100

RDS(on)

-

Ω

0.25

0.3

Semiconductor Group

2

03/99

Share Link: