C67078-S3127-A2 查看數據表（PDF） - Infineon Technologies
零件编号
产品描述 (功能)
生产厂家
C67078-S3127-A2 Datasheet PDF : 9 Pages
| |||
BUZ 323
Avalanche energy EAS = ƒ(Tj)
parameter: ID = 15 A, VDD = 50 V
RGS = 25 Ω, L = 6.14 mH
800
mJ
EAS
600
500
400
300
200
100
0
20 40 60 80 100 120 °C 160
Tj
Drain-source breakdown voltage
V(BR)DSS = ƒ(Tj)
Typ. gate charge
VGS = ƒ(QGate)
parameter: ID puls = 22 A
16
V
VGS
12
10
0,2 VDS max
0,8 VDS max
8
6
4
2
0
0 20 40 60 80 100 120 140 nC 170
QGate
480
V
460
V(BR)DSS
450
440
430
420
410
400
390
380
370
360
-60
-20
20
60
100 °C 160
Tj
Semiconductor Group
8
03/99
Share Link: 