BUZ901DP 查看數據表（PDF） - Unspecified

零件编号

产品描述 (功能)

生产厂家

BUZ901DP

N–CHANNEL POWER MOSFET

Unspecified 

MAGNA

TEC

MECHANICAL DATA

Dimensions in mm

20.0

3.3 Dia.

BUZ900DP

BUZ901DP

N–CHANNEL

POWER MOSFET

5.0

POWER MOSFETS FOR

AUDIO APPLICATIONS

123

2.0

3.4

1.0

2.0

1.2

5.45 5.45

TO–3PBL

Pin 1 – Gate

Pin 2 – Source

Case is Source

0.6

2.8

Pin 3 – Drain

FEATURES

• HIGH SPEED SWITCHING

• N–CHANNEL POWER MOSFET

• SEMEFAB DESIGNED AND DIFFUSED

• HIGH VOLTAGE (160V & 200V)

• HIGH ENERGY RATING

• ENHANCEMENT MODE

• INTEGRAL PROTECTION DIODE

• P–CHANNEL ALSO AVAILABLE AS

BUZ905DP & BUZ906DP

• DOUBLE DIE PACKAGE FOR MAXIMUM

POWER AND HEATSINK SPACE

ABSOLUTE MAXIMUM RATINGS

(Tcase = 25°C unless otherwise stated)

VDSX

Drain – Source Voltage

VGSS

Gate – Source Voltage

ID

Continuous Drain Current

ID(PK)

Body Drain Diode

PD

Total Power Dissipation

@ Tcase = 25°C

Tstg

Storage Temperature Range

Tj

Maximum Operating Junction Temperature

RθJC

Thermal Resistance Junction – Case

BUZ900DP

160V

BUZ901DP

200V

±14V

16A

16A

250W

–55 to 150°C

150°C

0.5°C/W

Magnatec. Telephone (01455) 554711. Telex: 341927. Fax (01455) 552612.

Prelim. 2/95

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