BYD13 查看數據表（PDF） - Philips Electronics
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BYD13 Datasheet PDF : 7 Pages
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Philips Semiconductors
Controlled avalanche rectifiers
Product specification
BYD13 series
SYMBOL
PARAMETER
IF(AV)
average forward current
IFSM
non-repetitive peak forward current
ERSM
Tstg
Tj
non-repetitive peak reverse
avalanche energy
storage temperature
junction temperature
CONDITIONS
Ttp = 55 °C; lead length = 10 mm;
averaged over any 20 ms period;
see Figs 2 and 4
Tamb = 65 °C; PCB mounting
(see Fig.9);
averaged over any 20 ms period;
see Figs 3 and 4
t = 10 ms half sinewave;
Tj = Tj max prior to surge;
VR = VRRMmax
L = 120 mH; Tj = Tj max prior to
surge; inductive load switched off
see Fig.5
MIN.
−
MAX. UNIT
1.40 A
−
0.75 A
−
20 A
−
7 mJ
−65 +175 °C
−65 +175 °C
ELECTRICAL CHARACTERISTICS
Tj = 25 °C; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
VF
V(BR)R
IR
trr
Cd
forward voltage
reverse avalanche
breakdown voltage
IF = 1 A; Tj = Tj max; see Fig.6
IF = 1 A; see Fig.6
IR = 0.1 mA
BYD13D
BYD13G
BYD13J
BYD13K
BYD13M
reverse current
reverse recovery time
diode capacitance
VR = VRRMmax; see Fig.7
VR = VRRMmax; Tj = 165 °C; see Fig.7
when switched from IF = 0.5 A to IR = 1 A;
measured at IR = 0.25 A; see Fig.10
VR = 0 V; f = 1 MHz; see Fig.8
MIN.
−
−
225
450
650
900
1 100
−
−
−
−
TYP.
−
−
MAX. UNIT
0.93 V
1.05 V
−
−V
−
−V
−
−V
−
−V
−
−V
−
1 µA
−
100 µA
3
− µs
21
− pF
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE UNIT
Rth j-tp
Rth j-a
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
lead length = 10 mm
note 1
60 K/W
120 K/W
Note
1. Device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper ≥40 µm, see Fig.9.
For more information please refer to the “General Part of associated Handbook”.
1996 May 24
3
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