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BYD33 查看數據表(PDF) - Philips Electronics

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BYD33 Datasheet PDF : 12 Pages
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Philips Semiconductors
Fast soft-recovery
controlled avalanche rectifiers
Product specification
BYD33 series
SYMBOL
PARAMETER
-d-d--I--tR--
maximum slope of reverse recovery
current
BYD33D to J
BYD33K to V
CONDITIONS
when switched from
IF = 1 A to VR 30 V
and dIF/dt = 1 A/µs;
see Fig.20
MIN. TYP. MAX. UNIT
6 A/µs
5 A/µs
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE UNIT
Rth j-tp
Rth j-a
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
lead length = 10 mm
note 1
60
K/W
120
K/W
Note
1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer 40 µm, see Fig.19.
For more information please refer to the “General Part of associated Handbook”.
1996 Sep 18
4

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