BYG20D(2020) 查看數據表（PDF） - Vishay Semiconductors
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BYG20D Datasheet PDF : 5 Pages
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www.vishay.com
BYG20D, BYG20G, BYG20J
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
Axis Title
10
1
TJ= 150 °C
0.1
0.01
TJ= 25 °C
TJ= -40 °C
10000
1000
100
0.001
0
0.5 1.0 1.5 2.0 2.5
Instantaneous Forward Voltage (V)
10
3.0
Fig. 1 - Forward Current vs. Forward Voltage
70
VR = VRRM
60
50
PR - Limit
40
at 100 % VR
30
20
PR - Limit
at 80 % VR
10
0
25
50
75
100
125
150
Junction Temperature (°C)
Fig. 4 - Max. Reverse Power Dissipation vs. Junction Temperature
1.6
VR = VRRM
1.4
RθJA ≤ 25 K/W
Half Sine-Wave
1.2
1.0
0.8
RθJA ≤ 125 K/W
0.6
0.4
RθJA ≤ 150 K/W
0.2
0
0 20 40 60 80 100 120 140 160
Ambient Temperature (°C)
Fig. 2 - Max. Average Forward Current vs. Ambient Temperature
30
f = 1 MHz
25
20
15
10
5
0
0.1
1
10
100
Reverse Voltage (V)
Fig. 5 - Diode Capacitance vs. Reverse Voltage
100
VR = VRRM
10
1
25
50
75
100
125
150
Junction Temperature (°C)
Fig. 3 - Reverse Current vs. Junction Temperature
600
IR = 0.5 A, iR = 0.125 A
500
400
TA = 125 °C
300
TA = 100 °C
200
TA = 75 °C
TA = 50 °C
100
TA = 25 °C
0
0
0.2
0.4
0.6
0.8
1.0
Forward Current (A)
Fig. 6 - Reverse Recovery Time vs. Forward Current
Revision: 21-Feb-2020
3
Document Number: 88958
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