BYG23M(1999) 查看數據表（PDF） - Vishay Semiconductors
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BYG23M Datasheet PDF : 4 Pages
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Fast Silicon Mesa SMD Rectifier
Features
D Glass passivated junction
D Low reverse current
D High reverse voltage
D Fast reverse recovery time
D Wave and reflow solderable
BYG23M
Vishay Telefunken
Applications
15 811
Freewheeling diodes in SMPS and converters
Snubber diodes
Absolute Maximum Ratings
Tj = 25_C
Parameter
Test Conditions
Reverse voltage=
Repetitive peak reverse voltage
Peak forward surge current
tp=10ms, half sinewave
Average forward current
Tamb = 65°C
Junction and storage temperature range
Pulse energy in avalanche mode,
I(BR)R=1A
non repetitive (inductive load switch off)
Type
Symbol Value Unit
VR=
1000
V
VRRM
IFSM
30
A
IFAV
1.5
A
Tj=Tstg –55...+150 °C
ER
20
mJ
Maximum Thermal Resistance
Tj = 25_C
Parameter
Test Conditions
Junction case
Junction ambient
mounted on epoxy–glass hard tissue,
17mm2 35mm Cu
mounted on epoxy–glass hard tissue,
50mm2 35mm Cu
mounted on Al–oxid–ceramic (Al2O3),
50mm2 35mm Cu
Symbol
RthJC
RthJA
RthJA
RthJA
Value
25
150
125
100
Unit
K/W
K/W
K/W
K/W
Document Number 86062
Rev. 1, 13-Aug-99
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