BYV116 查看數據表（PDF） - Philips Electronics
零件编号
产品描述 (功能)
生产厂家
BYV116 Datasheet PDF : 6 Pages
| |||
Philips Semiconductors
Rectifier diodes
Schottky barrier
Product specification
BYV116, BYV116B series
5 Forward dissipation, PF (W)
Vo = 0.31 V
Rs = 0.046 Ohms
4
0.2
3
0.1
BYV116
0.5
Tmb(max) / C
130
D = 1.0
134
138
2
142
I
tp
D
=
tp
T
1
146
T
t
0
150
0
1
2
3
4
5
6
7
8
Average forward current, IF(AV) (A)
Fig.1. Maximum forward dissipation PF = f(IF(AV)) per
diode; square current waveform where
IF(AV) =IF(RMS) x √D.
Forward dissipation, PF (W)
5
Vo = 0.31 V
Rs = 0.046 Ohms
BYV116
Tmb(max) / C
130
4
a = 1.57 134
2.2 1.9
2.8
3
4
138
2
142
1
146
0
150
0
1
2
3
4
5
Average forward current, IF(AV) (A)
Fig.2. Maximum forward dissipation PF = f(IF(AV)) per
diode; sinusoidal current waveform where a = form
factor = IF(RMS) / IF(AV).
10 IF / A
Tj = 25 C
Tj = 125 C
8
BYV116
6
typ
max
4
2
0
0
0.2
0.4
0.6
0.8
1
VF / V
Fig.3. Typical and maximum forward characteristic
IF = f(VF); parameter Tj
100mA IR / A
150 C
10mA
125 C
1mA 100 C
75 C
100uA
50 C
10uA Tj = 25 C
BYV116
1uA
0
5
10
15
20
25
VR / V
Fig.4. Typical reverse leakage current per diode;
IR = f(VR); parameter Tj
1000 Cd / pF
BYV116
100
10
1
10
100
VR / V
Fig.5. Typical junction capacitance per diode;
Cd = f(VR); f = 1 MHz; Tj = 25˚C to 125 ˚C.
10 Transient thermal impedance, Zth j-mb (K/W)
1
0.1
0.01
PD
tp
D
=
tp
T
0.001
1us
10us
T
t
100us 1ms 10ms 100ms 1s 10s
pulse width, tp (s)
PBYR325CTD
Fig.6. Transient thermal impedance; per diode;
Zth j-mb = f(tp).
March 1998
3
Rev 1.000
Share Link: 