BYV28-100 查看數據表（PDF） - Philips Electronics
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BYV28-100 Datasheet PDF : 16 Pages
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Philips Semiconductors
Ultra fast low-loss
controlled avalanche rectifiers
Product specification
BYV28 series
SYMBOL
PARAMETER
IFRM
repetitive peak forward current
BYV28-50 to 400
BYV28-500 and 600
IFRM
repetitive peak forward current
BYV28-50 to 400
BYV28-500 and 600
IFSM
non-repetitive peak forward current
ERSM
Tstg
Tj
non-repetitive peak reverse
avalanche energy
storage temperature
junction temperature
CONDITIONS
Ttp = 85 °C; see Figs 6 and 7
Tamb = 60 °C; see Figs 8 and 9
t = 10 ms half sine wave;
Tj = Tj max prior to surge;
VR = VRRMmax
L = 120 mH; Tj = Tj max prior to
surge; inductive load switched off
see Fig.12
MIN. MAX. UNIT
−
32 A
−
31 A
−
17 A
−
16 A
−
90 A
−
20 mJ
−65
+175 °C
−65
+175 °C
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
VF
VF
V(BR)R
IR
forward voltage
BYV28-50 to 200
BYV28-300 and 400
BYV28-500 and 600
forward voltage
BYV28-50 to 200
BYV28-300 and 400
BYV28-500 and 600
reverse avalanche breakdown
voltage
BYV28-50
BYV28-100
BYV28-150
BYV28-200
BYV28-300
BYV28-400
BYV28-500
BYV28-600
reverse current
trr
reverse recovery time
BYV28-50 to 200
BYV28-300 to 600
CONDITIONS
IF = 3.5 A; Tj = Tj max;
see Figs 13, 14 and 15
IF = 3.5 A;
see Figs 13, 14 and 15
IR = 0.1 mA
VR = VRRMmax; see Fig.16
VR = VRRMmax; Tj = 165 °C;
see Fig.16
when switched from
IF = 0.5 A to IR = 1 A;
measured at IR = 0.25 A;
see Fig.22
MIN. TYP.
−
−
−
−
−
−
−
−
−
−
−
−
55
−
110
−
165
−
220
−
330
−
440
−
560
−
675
−
−
−
−
−
−
−
−
−
MAX. UNIT
0.80 V
0.83 V
0.98 V
1.02 V
1.05 V
1.25 V
−V
−V
−V
−V
−V
−V
−V
−V
5 µA
150 µA
25 ns
50 ns
1997 Nov 24
3
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