BYV36E 查看數據表（PDF） - Galaxy Semi-Conductor
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BYV36E Datasheet PDF : 2 Pages
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RATINGS AND CHARACTERISTIC CURVES
BYV36A(Z)---BYV36E(Z)
FIG.1 -- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
50
10
N.1.
N.1.
trr
+0.5A
(+)
50VDC
(APPROX)
(-)
D.U.T.
1
N.1.
OSCILLOSCOPE
(NOTE 1)
(-)
PULSE
GENERATOR
(NOTE2)
(+)
0
-0.25A
-1.0A
NOTES:1.RISETIME=7ns MAX. INPUTIMPEDANCE=1M .22pF
2.RISE TIME=10ns MAX. SOURCE IMPEDANCE=5O
SETTIMEBASEFOR50/100 ns /cm
1cm
FIG.2 --FORWARD DERATING CURVE
FIG.3 --PEAK FORWARD SURGE CURRENT
1.75
1.50
1.25
1.00
0.75
0.50
Single Phase
Half Wave 60Hz
0.25 Resistive or
Inductive Load
0
0 25 50
75 100 125 150 175
AMBIENT TEMPERATURE,
FIG.4--TYPICAL FORWARD CHARACTERISTIC
30
25
20
15
10
5
1
TJ=125
8.3ms Single Half
Sine-Wave
10
100
NUMBER OF CYCLES AT 60 Hz
FIG.4--TYPICAL JUNCTION CAPACITANCE
100
10
4
2
1.0
TJ=25
Pulse Width=300µS
BYV36A
~
BYV36C
0.4
0.2
0.1
0.06
BYV36D
BYV36E
0.02
0.01
0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
100
60
40
20
10
4
TJ=25
f=1MHz
2
1
.1 .2 .4
1.0 2 4
10 20 40
100
INSTANTANEOUS FORWARD VOLTAGE,VOLTS
REVERSE VOLTAGE,VOLTS
Document Number 0261045
BLGALAXY ELECTRICAL
www.galaxycn.com
2.
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