BYW81-200SHRB 查看數據表（PDF） - STMicroelectronics
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BYW81-200SHRB Datasheet PDF : 9 Pages
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Characteristics
1
Characteristics
BYW81HR
Table 2. Absolute maximum ratings
Symbol
Characteristic
Value
Unit
Forward surge current (1) (2)
IFSM
Variant 05
Variant 03 (per diode)
Variant 03 (per device)
250
A
250
500
VRRM Repetitive peak reverse voltage(3)
200
V
Average output rectified current (50% duty cycle)(2)(4)
IO
Variant 05
Variant 03 (per diode)
15
A
15
Variant 03 (per device)
30
IF(RMS)
Forward rms current (per diode)(2)
Variant 05
Variant 03 (per diode)
Variant 03 (per device)
30
A
30
40
TOP
Operating case temperature range(5)
-55 to +150
°C
TJ
TSTG
Junction temperature
Storage temperature range(5)
+150
°C
-55 to +150
°C
TSOL
Soldering temperature
TO-254(6)
SMD.5(7)
+260
°C
+245
1. Sinusoidal pulse of 10 ms duration
2. For variant 03 the “per device” ratings apply only when both cathode terminals are tied together.
3. Pulsed, duration 5 ms, F = 50 Hz
4. For Tcase ≥ +110°C, derate linearly to 0 A at +150°C.
5. For devices with hot solder dip lead finish all testing performed at Tamb > +125 °C are carried out in a 100%
inert atmosphere.
6. Duration 10 seconds maximum at a distance of not less than 1.5 mm from the device body and the same
lead shall not be resoldered until 3 minutes have elapsed.
7. Duration 5 seconds maximum the same package shall not be resoldered until 3 minutes have elapsed.
Table 3. Thermal resistance
Symbol
Parameter
Value
Junction to case
Rth (j-c) (1) All variants (per diode)
2.3
Variant 03 (per device)(2)
1.4
1. Package mounted on infinite heatsink.
2. For variant 03 the “per device” ratings apply only when both cathode terminals are tied together.
Unit
°C/W
2/9
Doc ID 17735 Rev 1
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