BYW81-200SHRB 查看數據表（PDF） - STMicroelectronics

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BYW81-200SHRB

Aerospace 1 x 15 A and 2 x 15 A - 200 V fast recovery rectifier

STMicroelectronics 

BYW81HR

Characteristics

Table 4.

Symbol

s

Electrical measurements at ambiant temperature (per diode), Tamb = 22 ±3 °C

Characteristic

MIL-STD-750

test method

Test conditions

Limits

Min. Max.

Units

IR

VF1(1)

VF2(1)

Reverse current

Forward voltage

4016

4011

DC method, VR = 200 V

Pulse method, IF = 10 A

Pulse method, IF = 20 A

-

20

µA

-

1.0

V

-

1.2

V

VBR Breakdown voltage

4021

IR = 100 µA

200

-

V

C Capacitance

4001

VR = 10 V, F = 1 MHz

-

220 pF

trr Reverse recovery time

4031

IF = 1 A, VR = 30 V,

dIF/dt = -50 A/µs

-

40

ns

Zth(j-c)(2)

Relative thermal impedance,

junction to case

3101

IH = 15 to 40 A, tH = 50 ms

IM = 50 mA, tmd = 100 µs

Calculate ΔVF(3) °C/W

1. Pulse width ≤ 300µs, duty cycle ≤ 2%

2. Performed only during screening tests parameter drift values (initial measurements), go-no-go.

3. The limits for ΔVF shall be defined by the manufacturer on every lot in accordance with MIL-STD-750 Method 3101 and

shall guarantee the Rth(j-c) limits specified in maximum ratings.

Table 5. Electrical measurements at high and low temperatures (per diode)

Symbol

Characteristic

MIL-STD-750

test method

Test conditions(1)

Limits

Min. Max.

Units

IR Reverse current

4016

Tcase = +125 (+0, -5) °C

DC method, VR = 200 V

-

10

mA

VF1(2) Forward voltage

4011

Tcase = +125 (+0, -5) °C

pulse method, IF = 10 A

Tcase = +55 (+0, -5) °C

pulse method, IF = 10 A

-

0.85 V

-

1.15 V

1. Read and record measurements shall be performed on a sample of 5 components with 0 failures allowed. Alternatively a

100% inspection may be performed.

2. Pulse width ≤ 300µs, duty cycle ≤ 2%

Doc ID 17735 Rev 1

3/9

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