BYW81P-200 查看數據表（PDF） - STMicroelectronics
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BYW81P-200 Datasheet PDF : 6 Pages
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BYW81P-200 / BYW81PI-200 / BYW81G-200
THERMAL RESISTANCE
Symbol
Rth (j-c)
Junction to case
Parameter
BYW81P
BYW81PI / G
Value
2.0
3.5
Unit
°C/W
ELECTRICAL CHARACTERISTICS
STATIC CHARACTERISTICS
Symbol
Test Conditions
IR *
Tj = 25°C
VR = VRRM
VF **
Tj = 100°C
Tj = 125°C
IF = 12 A
Tj = 125°C
IF = 25 A
Tj = 25°C
Pulse test :
* tp = 5 ms, duty cycle < 2 %
** tp = 380 µs, duty cycle < 2 %
IF = 25 A
Min. Typ. Max. Unit
20 µA
1.5 mA
0.85 V
1.05
1.15
RECOVERY CHARACTERISTICS
Symbol
Test Conditions
Min. Typ. Max. Unit
trr
Tj = 25°C
IF = 0.5A
IR = 1A
Irr = 0.25A
25 ns
IF = 1A
dIF/dt = -50A/µs
40
VR = 30V
tfr
Tj = 25°C
IF = 1A
VFR = 1.1 x VF
tr = 10 ns
15
ns
VFP
Tj = 25°C
IF = 1A
tr = 10 ns
2
V
2/6
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