BYW81G 查看數據表（PDF） - STMicroelectronics
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BYW81G Datasheet PDF : 6 Pages
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BYW81P-200 / BYW81PI-200 / BYW81G-200
Fig. 7: Average current versus ambient
temperature.
(duty cycle : 0.5) (BYW81P)
IF(av)(A)
16
15
14
Rth(j-a)=Rth(j-c)
13
12
11
10
Rth(j-a)=15 oC/W
9
8
7 =0.5
6
T
5
4
3
2
1
=tp/T
tp
Tamb(oC)
0
0 20 40 60 80 100 120
140
160
Fig. 8: Average current versus ambient
temperature.
(duty cycle : 0.5) (BYW81PI / BYW81G)
IF(av)(A)
16
15
Rth(j-a)=Rth(j-c)
14
13
12
11
10
9
Rth(j-a)=15 o C/W
8
7 =0.5
6
T
5
4
3
2
1
=tp/T
tp
Tamb(oC)
0
0 20 40 60 80 100 120 140
160
Fig. 9: Junction capacitance versus reverse
voltage applied (Typical values).
Fig. 10: Recovery charges versus dIF/dt.
C(pF)
120
115
110
105
100
95
90
85
80
1
F=1Mhz Tj=25 oC
VR(V)
10
30 50 70
Fig. 11: Peak reverse current versus dIF/dt.
QRR(nC)
60
90%CONFIDENCE
50 IF=IF(av)
40
30
20
10
0
1
Tj=100 OC
Tj=25 OC
dIF/dt(A/us)
10
20
40 60 80
Fig. 12: Dynamic parameters versus junction
temperature.
IRM(A)
3.0
90%CONFIDENCE
2.5 IF=IF(av)
2.0
1.5
1.0
0.5
0.0
1
4/6
Tj=100 OC
Tj=25 OC
dIF/dt(A/us)
10
20
40 60 80
QRR;IRM[Tj]/QRR;IRM[Tj=125oC]
1.50
1.25
1.00
0.75
0.50
IRM
QRR
0.25
0.00
0
Tj(oC)
25 50 75 100 125 150
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