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BYW99P 查看數據表(PDF) - STMicroelectronics

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BYW99P Datasheet PDF : 6 Pages
1 2 3 4 5 6
BYW99P/PI/W
THERMAL RESISTANCES
Symbol
Rth (j-c)
Junction to case
Parameter
SOT93 / TO247
Per diode
TOP3I
Total
Per diode
Rth (c) Coupling
SOT93 / TO247
Total
TOP3I
When the diodes 1 and 2 are used simultaneously :
Tj-Tc (diode 1) = P(diode 1) x Rth(j-c) (Per diode) + P(diode 2) x Rth(c)
STATIC ELECTRICAL CHARACTERISTICS (Per diode)
Value
1.8
1.0
2.0
1.25
0.2
0.5
Unit
°C/W
°C/W
Symbol
IR *
Tj = 25°C
Test Conditions
VR = VRRM
Tj = 100°C
VF **
Tj = 125°C
IF = 12 A
Tj = 125°C
IF = 25 A
Tj = 25°C
IF = 25 A
Pulse test : * tp = 5 ms, δ < 2 %
** tp = 380 µs, δ < 2 %
To evaluate the conduction losses use the following equation :
P = 0.65 x IF(AV) + 0.016 x IF2(RMS)
Min. Typ. Max. Unit
20 µA
1.5 mA
0.85 V
1.05
1.15
RECOVERY CHARACTERISTICS
Symbol
Test Conditions
Min. Typ. Max. Unit
trr
Tj = 25°C
IF = 0.5A
IR = 1A
Irr = 0.25A
25 ns
IF = 1A
dIF/dt = -50A/µs
40
VR = 30V
tfr
Tj = 25°C
IF = 1A
VFR = 1.1 x VF
tr = 10 ns
15
ns
VFP
Tj = 25°C
IF = 1A
tr = 10 ns
2
V
2/6

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