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BYW80 查看數據表(PDF) - ON Semiconductor

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BYW80
ON-Semiconductor
ON Semiconductor ON-Semiconductor
BYW80 Datasheet PDF : 4 Pages
1 2 3 4
BYW80200
THERMAL CHARACTERISTICS
Rating
Maximum Thermal Resistance, JunctiontoCase
ELECTRICAL CHARACTERISTICS
Maximum Instantaneous Forward Voltage (Note 1)
(iF = 7.0 Amps, TC = 100°C)
(iF = 22 Amps, TC = 25°C)
Maximum Instantaneous Reverse Current (Note 1)
(Rated dc Voltage, TJ = 100°C)
(Rated dc Voltage, TJ = 25°C)
Maximum Reverse Recovery Time
(IF = 1.0 Amp, di/dt = 50 Amps/ms)
(IF = 0.5 Amp, iR = 1.0 Amp, IREC = 0.25 Amp)
1. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%.
Symbol
RqJC
vF
iR
trr
Values
3.0
0.85
1.25
1
0.01
35
25
Unit
°C/W
V
mA
ns
100
70
50
30
20
10
7.0
5.0
3.0
2.0
TJ = 175°C
100°C 25°C
1.0
0.7
0.5
0.3
0.2
0.1
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
vF, INSTANTANEOUS VOLTAGE (VOLTS)
Figure 1. Typical Forward Voltage
1000
100
TJ = 175°C
10
100°C
1.0
25°C
0.1
0.01
0 20 40 60 80 100 120 140 160 180 200
VR, REVERSE VOLTAGE (VOLTS)
Figure 2. Typical Reverse Current*
* The curves shown are typical for the highest voltage device in the
grouping. Typical reverse current for lower voltage selections can be
estimated from these same curves if VR is sufficiently below rated VR.
10
9.0
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0
140
dc
SQUARE WAVE
RATED VR APPLIED
150
160
170
180
TC, CASE TEMPERATURE (°C)
Figure 3. Current Derating, Case
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