BZA109TS 查看數據表（PDF） - Philips Electronics

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BZA109TS

9-fold ESD Transient Suppressor

Philips Electronics 

Philips Semiconductors

9-fold ESD Transient Suppressor

LIMITING VALUES (per diode)

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL

PARAMETER

IZ

reverse current

IF

forward current

IFT

feed-through current

IFSM

peak forward current

IZSM

peak reverse current

Ptot

total power dissipation

Tstg

storage temperature

Tj

junction temperature

CONDITIONS

DC; Tamb = 25 °C

DC; Tamb = 25 °C

DC; Tamb = 25 °C; note 1

tp = 1 ms; square wave

tp = 1 ms; square wave

Tamb = 25 °C; note 2

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

Rth j-a

thermal resistance from junction to ambient; note 2

Note to the Limiting values and Thermal characteristics

1. Current is flowing from input to corresponding output.

2. One or more diodes loaded.

ELECTRICAL CHARACTERISTICS (per diode)

Tj = 25 °C unless otherwise specified.

SYMBOL

PARAMETER

CONDITIONS

VZ

VF

VZSM

IH

RZ

SZ

CD

reverse voltage

forward voltage

reverse surge voltage

input high current

zener impedance

temperature coefficient of VZ

input diode capacitance

IZ = 250 µA

IF = 100 mA

tp = 1 ms; IZSM = 2.5 A

VIN = 5.25 V

IZ = 250 µA

f = 1 MHz; VR = 0

f = 1 MHz; VR = 5.25 V

Preliminary specification

BZA109TS

MIN.

−

−

−

−

−

−65

−65

MAX.

20

100

100

4.5

2.5

0.95

+150

+150

UNIT

mA

mA

mA

A

A

W

°C

°C

VALUE

135

UNIT

K/W

MIN.

6.4

−

−

−

−

−

−

−

TYP.

6.8

−

−

−

−

3

−

−

MAX. UNIT

7.2 V

1.1 V

10 V

0.5 µA

100 Ω

− mV/K

200 pF

100 pF

1997 Sep 08

3

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