BZA856AVL 查看數據表（PDF） - NXP Semiconductors.

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BZA856AVL

Quadruple low capacitance ESD suppressor

NXP Semiconductors. 

NXP Semiconductors

Quadruple low capacitance ESD

suppressor

Product data sheet

BZA800AVL series

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

SYMBOL

PARAMETER

Per diode

IZ

IF

IFSM

Ptot

PZSM

Tstg

Tj

ESD

working current

continuous forward current

non-repetitive peak forward current

total power dissipation

non repetitive peak reverse power

dissipation

storage temperature

junction temperature

electrostatic discharge

CONDITIONS

MIN.

Tamb = 25 °C

−

Tamb = 25 °C

−

tp = 1 ms; square pulse

−

Tamb = 25 °C; note 2; see Fig.5

−

square pulse; tp = 1 ms

−

−65

−

IEC 61000-4-2 (contact discharge) 15

HBM MIL-Std 883

10

Notes

1. DC working current limited by Ptot(max).

2. Device mounted on standard printed-circuit board.

MAX. UNIT

note 1 mA

200

mA

3.5

A

300

mW

6

W

+150 °C

150

°C

−

kV

−

kV

ESD STANDARDS COMPLIANCE

STANDARD

IEC 61000-4-2, level 4 (ESD)

HBM MIL-Std 883, class 3

CONDITIONS

>15 kV (air); >8 kV (contact discharge)

>4 kV

THERMAL CHARACTERISTICS

SYMBOL

Rth j-a

Rth j-s

PARAMETER

thermal resistance from junction to

ambient

thermal resistance from junction to

solder point; note 1

Note

1. Solder point of common anode (pin 2).

CONDITIONS

all diodes loaded

one diode loaded

all diodes loaded

VALUE

410

200

185

UNIT

K/W

K/W

K/W

2003 Oct 20

3

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