DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

M48T212V 查看數據表(PDF) - STMicroelectronics

零件编号
产品描述 (功能)
生产厂家
M48T212V
ST-Microelectronics
STMicroelectronics ST-Microelectronics
M48T212V Datasheet PDF : 32 Pages
First Prev 11 12 13 14 15 16 17 18 19 20 Next Last
M48T212Y, M48T212V
WRITE Mode
The M48T212Y/V is in the WRITE Mode whenever
W (WRITE Enable) and E (Chip Enable) are in a
low state after the address inputs are stable. The
start of a WRITE is referenced from the latter oc-
curring falling edge of W or E. A WRITE is termi-
nated by the earlier rising edge of W or E. The
addresses must be held valid throughout the cy-
cle. E or W must return high for a minimum of tE-
HAX from Chip Enable or tWHAX from WRITE
Enable prior to the initiation of another READ or
WRITE cycle. Data-in must be valid tDVWH prior to
the end of WRITE and remain valid for tWHDX af-
terward.
G should be kept high during WRITE cycles to
avoid bus contention; although, if the output bus
has been activated by a low on E and G a low on
W will disable the outputs tWLQZ after W falls.
When E is low during the WRITE, one of the on-
board TIMEKEEPER® registers will be selected
and data will be written into the device. When EX
is low (and E is high) an external SRAM location is
selected.
Note: Care should be taken to avoid taking both E
and EX low simultaneously to avoid bus conten-
tion.
Figure 7. WRITE Cycle Timing: RTC Control Signal Waveforms
WRITE
tAVAV
WRITE
tAVAV
READ
tAVAV
ADDRESS
tAVEL
tAVEH
tELEH
tAVWH
tEHAX tWHAX
tAVQV
E
tGLQV
G
tAVWL
tEHDX
tWLWH
tWHQX
tWLQZ
W
DQ0-DQ7
DATA OUT
VALID
tEHQZ
tDVEH tDVWH
DATA IN
VALID
DATA IN
VALID
tWHDX
DATA OUT
VALID
Note: EX is assumed High.
AI02641
11/32

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]