C30817E 查看數據表（PDF） - PerkinElmer Inc
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C30817E Datasheet PDF : 9 Pages
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C30659-1060nm Series
Table 2. Electrical Characteristics at TA=22ºC
Test Conditions: Ambient Temperature, Vamp = ±5 Volts, HV = +VR (see Note 1), RL = 50Ω AC Coupled
1060nm Silicon APD
Detector Type
C30659-1060-3A
C30659-1060-R8B
(Si APD C30956E)
(Si APD C30954E)
Active Diameter
Min
Typ
Max
3.0
Min
Typ
Max
0.8
Active Area
7.1
0.5
Bandwidth Range
50
200
Temperature Coefficient of VR
for constant Gain
VR for specified responsivity
Temperature sensor sensitivity
-
2.2
-
275 Note 1 425
-1.8
-2.1 -2.4
-
2.2
-
275
Note 1 425
-1.8
-2.1
-2.4
Responsivity
At 900nm
At 1060nm
RF (Internal Feedback Resistor)
Noise Equivalent Power (NEP) (note 3)
f - 100 kHz, ∆f = 1.0 Hz
At 900nm
At 1060nm
Output Spectral Voltage:
(f = 100 kHz - f-3dB)
Output Impedance
System Bandwidth, f-3dB
Rise Time, tr (λ = 900 and 1060nm)
10% to 90% points
Fall Time, tf (λ = 830 and 900nm)
90% to 10% points
-
450
-
-
280
-
-
22
-
-
55
80
-
90
125
-
25
35
33
40
50
40
50
-
-
7
-
-
7
-
-
370
-
-
200
-
-
12
-
-
55
80
-
100
150
-
20
30
33
40
50
175
200
-
-
2
-
-
2
-
Recovery time after overload (note 4)
-
-
150
-
-
150
Output Voltage Swing (1kΩ load) (note 5)
2
3
-
2
3
-
Output Voltage Swing (50Ω load) (note 5)
0.7
0.9
-
0.7
0.9
-
Output Offset Voltage
-1
0.25
1
-1
0.25
1
Positive Supply Current (V+)
-
20
35
-
20
35
Negative Supply Current (V-)
-
10
20
-
10
20
Notes: 1. A specific value of VR is supplied with each device. The VR value will be within the specified ranges.
2. If = 0.1 mA, 25°C
3. NEPmax is the Maximum Output Spectral Noise Voltage max divided by the typical Responsivity.
4. 0dBm, 250ns pulse.
5. Pulsed operation.
mm
mm2
MHz
V/°C
V
mV/°C
kV/W
kV/W
kΩ
fW/√Hz
fW/√Hz
nV/√Hz
Ω
MHz
ns
ns
ns
V
V
V
mA
mA
w w w. o p t o e l e c t r o n i c s . p e r k i n e l m e r. c o m
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