VSC7709WC 查看數據表（PDF） - Vitesse Semiconductor
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VSC7709WC
Vitesse Semiconductor
VSC7709WC Datasheet PDF : 10 Pages
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VITESSE
SEMICONDUCTOR CORPORATION
Advance Product Information
VSC7709
Features
• High Bandwidth: 1100MHz
• Low Input Noise Equivalent Power: 0.5mW
• Single 3.3V Supply
• 1.25Gb/s Data Rate
• 75mm Optically Active Area (PIN diode)
• Integrated AGC
• Package: TO-46, TO-56, Bare Die
1.25Gb/s Photodetector/Transimpedance
Amplifier for Optical Communication
Applications
• Gigabit Ethernet Optical Receivers
• Fibre Channel Optical Receivers
• ATM Optical Receivers
• System Interconnect
• SONET/SDH
General Description
The VSC7709 integrated PIN Photodetector/Transimpedance Amplifier provides a highly integrated solu-
tion for converting 1300 nm light from a fiber optic communications channel into a differential output voltage.
The benefits of Vitesse Semiconductor’s Gallium Arsenide H-GaAs process are fully utilized to provide a very
high bandwidth and low noise amplifier. The PIN detector is 75µm in diameter. The detector bias is supplied
internally eliminating the need for a separate bias connection. The sensitivity, duty cycle distortion and jitter
meet or exceed all Fibre Channel and Gigabit Ethernet application requirements. The VSC7709 is available in
flat-windowed or lensed packages. The transimpedance amplifier is also available in bare die form.
The use of a photodetector and transimpedance amplifier hybrid, reduces the input capacitance, resulting in
higher sensitivity and bandwidth and improved speed of response. These parts can easily be used in developing
Fibre Channel and Gigabit Ethernet electro-optic receivers for the 900nm-1600nm spectral range which exhibit
very high performance and ease of use.
Block Diagram
+3.3V
D0
D1
G52362-0, Rev 2.1
04/02/01
© VITESSE SEMICONDUCTOR CORPORATION • 741 Calle Plano • Camarillo, CA 93012
Tel: (800) VITESSE • FAX: (805) 987-5896 • Email: prodinfo@vitesse.com
Internet: www.vitesse.com
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