VSC7709 查看數據表（PDF） - Vitesse Semiconductor

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VSC7709

1.25Gb/s Photodetector/Transimpedance Amplifier for Optical Communication

Vitesse Semiconductor 

VITESSE

SEMICONDUCTOR CORPORATION

1.25Gb/s Photodetector/Transimpedance

Amplifier for Optical Communication

Advance Product Information

VSC7709

Electrical Characteristics

Table 1: Electro-Optic Specifications

Symbol

Parameter

Min Typ Max Units

Conditions

λ

VDD

IS

PSRR

Wavelength

Power Supply Voltage

Power Supply Current

Power Supply Rejection Ratio

1270

3.0

30

TBD

1355

3.6

nm

V

mA

dB

f = 0.3MHz to 40MHz. Hybrid

differential with external filter.

BW

Optical Modulation Bandwidth

1000

MHz

See Measurements and

Applications section

fC

RD

TZ

RO

VN

NEPO

S

∆V

VD

PDJ

DCD

Low Frequency Cutoff

Differential Responsivity

Differential Transimpedance

Single-Ended Output Impedance

Output Noise Voltage

Input Noise Equivalent Optical Power

Sensitivity

Bias Offset Voltage

Differential Output Voltage

Pattern Dependent Jitter

Duty Cycle Distortion

2

2.5

2000

25

0.5

-26

0.25

60

5

MHz

See Measurements and

Applications section

mV/µW

Ω

RL = 100Ω(1)

Ω

RL = 100Ω(2)

1.2 mV rms BW = 800MHz, P = 0mW

µW rms BW = 800MHz, P = 0mW

dBm BER 10-12, B = 1250Mb/s(3)

200 mV P = -3dBm

V P = -3dBm, R = 100Ω

ps

P = -3dBm, ±10% voltage

window

% P = -3dBm

TR /TF

Rise and Fall Times

400

ps 20% to 80%, P = -3dBm

NOTES: (1) Applicable to packaged parts with assembled 1300nm photodetector with responsivity = 0.8A/W. (2) Applicable to bare dice.

(3) By characterization. See Measurements and Application section.

Absolute Maximum Ratings(1)

Power Supply Voltage (VDD)........................................................................................................................... +6V

Maximum Junction Temperature Range...................................................................................... -55°C to +125°C

Storage Temperature Range......................................................................................................... -55°C to +125°C

Incident Optical Power (PINC) .................................................................................................................... +3dBm

NOTE: (1) CAUTION: Stresses listed under “Absolute Maximum Ratings” may be applied to devices one at a time without caus-

ing permanent damage. Functionality at or above the values listed is not implied. Exposure to these values for extended

periods may affect device reliability.

Recommended Operating Conditions

Positive Voltage Rail (VDD).................................................................................................................. 3.0 to 3.6V

Negative Voltage Rail (GND)............................................................................................................................ 0V

Operating Temperature Range (TA) ...........................................................................0°C Ambient to +85°C Case

Page 2

© VITESSE SEMICONDUCTOR CORPORATION • 741 Calle Plano • Camarillo, CA 93012

Tel: (800) VITESSE • FAX: (805) 987-5896 • Email: prodinfo@vitesse.com

Internet: www.vitesse.com

G52362-0, Rev 2.1

04/02/01

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