VSC7709WB 查看數據表（PDF） - Vitesse Semiconductor
零件编号
产品描述 (功能)
生产厂家
VSC7709WB
Vitesse Semiconductor
VSC7709WB Datasheet PDF : 10 Pages
| |||
VITESSE
SEMICONDUCTOR CORPORATION
1.25Gb/s Photodetector/Transimpedance
Amplifier for Optical Communication
Advance Product Information
VSC7709
Figure 2: Pad Assignments
Pad 3
CLOP
(A)
Pad 2
VGND
(A)
961µm (37.8mil)
861µm (33.9mil)
Pad 4
CLON
(A)
Pad 5
VGND
(A)
1898µm 1798µm
(74.7mil) (70.8mil)
(A)
Pad 10
ANODE
MINUS
Bond Pad
(A)
(A)
Pad 9
Pad 8
ANODE
MINUS
<Probe Pads>
CATHODE
PLUS
Page 4
(B)
Pad 1
VGND
Die Size:
861µm x 1798µm (33.9mil x 70.8mil)
Actual Die Size:
961µm x 1898µm (37.8mil x 74.7mil)
Die Thickness:
254µm (10mil)
Pad Size (A):
110µm x 110µm (4.3mil x 4.3mil)
Pad Passivation Opening (A): 86µm x 86µm (3.3mil x 3.3mil)
Pad Size (B):
220µm x 110µm (8.6mil x 4.3mil)
Pad Passivation Opening (B): 196µm x 86µm (7.7mil x 3.3mil)
(B)
Pad 6
VDD
© VITESSE SEMICONDUCTOR CORPORATION • 741 Calle Plano • Camarillo, CA 93012
Tel: (800) VITESSE • FAX: (805) 987-5896 • Email: prodinfo@vitesse.com
Internet: www.vitesse.com
G52362-0, Rev 2.1
04/02/01
Share Link: