ZXMD63C03X 查看數據表（PDF） - Zetex => Diodes

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ZXMD63C03X

30V DUAL N AND P-CHANNEL ENHANCEMENT MODE MOSFET

Zetex => Diodes 

ZXMD63C03X

P-CHANNEL

ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).

PARAMETER

SYMBOL MIN. TYP. MAX. UNIT

STATIC

Drain-Source Breakdown Voltage V(BR)DSS -30

V

CONDITIONS

ID=-250µA, VGS=0V

Zero Gate Voltage Drain Current

Gate-Body Leakage

Gate-Source Threshold Voltage

Static Drain-Source On-State

Resistance (1)

Forward Transconductance (3)

DYNAMIC (3)

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

SWITCHING(2) (3)

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Total Gate Charge

Gate-Source Charge

Gate Drain Charge

SOURCE-DRAIN DIODE

Diode Forward Voltage (1)

IDSS

IGSS

VGS(th)

RDS(on)

gfs

Ciss

Coss

Crss

td(on)

tr

td(off)

tf

Qg

Qgs

Qgd

VSD

-1.0

0.92

-1 µA

Ϯ100 nA

V

0.185 Ω

0.27 Ω

S

270

pF

80

pF

30

pF

2.6

4.8

13.1

9.3

ns

ns

ns

ns

7 nC

1.2 nC

2 nC

-0.95 V

Reverse Recovery Time (3)

trr

21.4

ns

Reverse Recovery Charge(3)

Qrr

15.7

nC

NOTES:

(1) Measured under pulsed conditions. Width=300µs. Duty cycle Յ2% .

(2) Switching characteristics are independent of operating junction temperature.

(3) For design aid only, not subject to production testing.

VDS=-30V, VGS=0V

VGS=Ϯ20V, VDS=0V

I

D

=

-25

0µ

A,

VDS=VGS

VGS=-10V, ID=-1.2A

VGS=-4.5V, ID=-0.6A

VDS=-10V,ID=-0.6A

VDS=-25 V, VGS=0V,

f=1MHz

VDD =-15V, ID=-1.2A

RG=6.2Ω, RD=6.2Ω

(Refer to test circuit)

VDS=-24V,VGS=-10V,

ID=-1.2A

(Refer to test circuit)

Tj=25°C, IS=-1.2A,

VGS=0V

Tj=25°C, IF=-1.2A,

di/dt= 100A/µs

ISSUE 1 - OCTOBER 2005

8

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