PTB20134 查看數據表（PDF） - Ericsson
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PTB20134 Datasheet PDF : 2 Pages
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PTB 20134
Electrical Characteristics (100% Tested)
Characteristic
Breakdown Voltage C to E
Breakdown Voltage C to E
Breakdown Voltage E to B
DC Current Gain
Conditions
IB = 0 A, IC = 100 mA
VBE = 0 V, IC = 100 mA
IC = 0 A, IE = 5 mA
VCE = 5 V, IC = 1 A
Symbol
V(BR)CEO
V(BR)CES
V(BR)EBO
hFE
Min
25
55
3.5
20
RF Specifications (100% Tested)
Characteristic
Gain
(VCC = 25 Vdc, Pout = 30 W, ICQ = 100 mA, f = 900 MHz)
Collector Efficiency
(VCC = 25 Vdc, Pout = 30 W, ICQ = 100 mA, f = 900 MHz)
Intermodulation Distortion
(VCC = 25 Vdc, Pout = 30 W(PEP), ICQ = 100 mA,
f = 900 MHz, ∆f = 1 MHz)
Load Mismatch Tolerance
(VCC = 25 Vdc, Pout = 30 W, ICQ = 100 mA,
f = 900 MHz—all phase angles at frequency of test)
Symbol Min
Gpe
8
ηC
50
IMD
—
Ψ
—
Typical Performance
Gain & Efficiency vs. Frequency
(as measured in a broadband circuit)
13
80
12
70
Efficiency (%)
11
60
10
50
9 Gain (dB)
8
VCC = 25 V
40
ICQ = 100 mA
POUT = 30 W
30
7
20
850 860 870 880 890 900 910
Frequency (MHz)
e
Typ Max Units
30
—
Volts
70
—
Volts
5
—
Volts
50
100
—
Typ Max Units
9.5
—
dB
—
—
%
-30
—
dBc
—
30:1
—
Ericsson Components
RF Power Products
675 Jarvis Drive
Morgan Hill, CA 95037 USA
Telephone: 408-778-9434
1-877-GOLDMOS
(1-877-465-3667)
e-mail: rfpower@ericsson.com
www.ericsson.com/rfpower
2
Specifications subject to change without notice.
LF
© Ericsson Components AB 1995
EUS/KR 1301-PTB 20134 Uen Rev. D 09-28-98
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