CE1N2R 查看數據表（PDF） - NEC => Renesas Technology

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CE1N2R

on-chip resistor NPN silicon epitaxial transistor For mid-speed switching

NEC => Renesas Technology 

DATA SHEET

COMPOUND TRANSISTOR

CE1N2R

on-chip resistor NPN silicon epitaxial transistor

For mid-speed switching

The CE1N2R is a transistor of on-chip high hFE resistor

incorporating dumper diode in collector to emitter and zener diode

in collector to base as protect elements. This transistor is ideal for

actuator drives of OA equipments and electric equipments.

FEATURES

• On-chip zener diode for surge voltage absorption

• On-chip bias resistor: R1 = 680 Ω, R2 = 10 kΩ

• Low power consumption during driving:

VOL = 0.3 V MAX.@V1 = 5.0 V, IC = 0.5 A

• On-chip dumper diode for reverse cable

PACKAGE DRAWING (UNIT: mm)

ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)

Parameter

Symbol

Ratings

Unit

Collector to base voltage

VCBO

60±10

V

Collector to emitter voltage

VCEO

60±10

V

Emitter to base voltage

VEBO

15

V

Collector current (DC)

IC(DC)

±2.0

A

Collector current (Pulse)

IC(pulse) *

±3.0

A

Base current (DC)

IB(DC)

0.03

A

Total power dissipation

PT

1.0

W

Junction temperature

Tj

150

°C

Storage temperature

Tstg

−55 to +150

°C

* PW ≤ 10 ms, duty cycle ≤ 50 %

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No. D10846EJ2V0DS00 (2nd edition)

Date Published April 2002 N CP(K)

©

Printed in Japan

21090928

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