CEM4532 查看數據表（PDF） - Chino-Excel Technology

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CEM4532

Dual Enhancement Mode Field Effect Transistor ( N and P Channel)

Chino-Excel Technology 

CEM4532

P-Channel ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted)

Parameter

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate-Body Leakage

ON CHARACTERISTICSb

Symbol Condition

Min TypC Max Unit

5

BVDSS VGS = 0V, ID = 250µA -30

IDSS VDS = -30V, VGS = 0V

V

-1 µA

IGSS VGS =Ć20V, VDS = 0V

Ć100 nA

Gate Threshold Voltage

Drain-Source On-State Resistance

VGS(th)

RDS(ON)

VDS = VGS, ID = -250µA

VGS = -10V, ID = -4.5A

VGS = -4.5V, ID = -3.6A

-1

-3 V

60 80 mΩ

105 135 mΩ

On-State Drain Current

ID(ON)

Forward Transconductance

gFS

DYNAMIC CHARACTERISTICSc

Input Capacitance

CISS

Output Capacitance

COSS

Reverse Transfer Capacitance

CRSS

SWITCHING CHARACTERISTICSc

Turn-On Delay Time

tD(ON)

Rise Time

tr

Turn-Off Delay Time

tD(OFF)

Fall Time

tf

Total Gate Charge

Qg

Gate-Source Charge

Qgs

Gate-Drain Charge

Qgd

VDS = -5V, VGS = -10V -15

A

VDS = -15V, ID = -4.5A

5.8

S

VDS =-15V, VGS = 0V

f =1.0MHZ

448

PF

317

PF

308

PF

VDD = -15V,

ID = -1A,

VGEN = -10V,

RGEN = 6 Ω

VDS =-15V, ID = -4.5A,

VGS =-10V

19 45 ns

19 45 ns

38 75 ns

48 95 ns

18 23 nC

3

nC

4.5

nC

5-9

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