CEM4532 查看數據表（PDF） - Chino-Excel Technology
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CEM4532 Datasheet PDF : 8 Pages
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CEM4532
1.30
VDS=VGS
1.20
ID=250ijA
1.10
1.00
0.90
0.80
0.70
0.60
-50 -25 0
25 50
75 100 125 150
Tj, Junction Temperature ( C)
Figure 5. Gate Threshold Variation
with Temperature
20
16
12
8
4
VDS=15V
0
0
5
10
15
20
IDS, Drain-Source Current (A)
Figure 7. Transconductance Variation
with Drain Current
10
8
VDS=15V
ID=4.7A
6
4
2
0
0
3
6
9
12
Qg, Total Gate Charge (nC)
Figure 9. Gate Charge
5-11
1.15
ID=250ijA
1.10
1.05
1.00
5
0.95
0.90
0.85
-50 -25 0 25 50 75 100 125 150
Tj, Junction Temperature ( C)
Figure 6. Breakdown Voltage Variation
with Temperature
20
10 VGS=0V
1
0.1
0.4
0.6
0.8
1.0
1.2
VSD, Body Diode Forward Voltage (V)
Figure 8. Body Diode Forward Voltage
Variation with Source Current
101
RDS(ON) Limit
100
1s100m10sms1ms
DC10s
10-1
TA=25 C
Tj=150 C
-2 Single Pulse
10
10-1
101
100
101
VDS, Drain-Source Voltage (V)
Figure 10. Maximum Safe
Operating Area
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