CF5012ANB 查看數據表（PDF） - Nippon Precision Circuits
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CF5012ANB Datasheet PDF : 7 Pages
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PAD LAYOUT
(Unit:µm)
CF5012 series
VDD
Q (920,1180)
Y
HA5012ANB
(0,0) INHN XTN
XT VSS
X
Chip size: 0.92 × 1.18 mm
Chip thickness: 300 ± 30 µm
Chip base: VDD level
PIN DESCRIPTION and PAD DIMENSIONS
Name
INHN
XT
XTN
VSS
Q
VDD
Pad dimensions [µm]
I/O
Description
X
Y
I
Output state control input. High impedance when LOW. Pull-up resistor built in
195
174.4
I
Amplifier input
O
Amplifier output
Crystal oscillator connection pins.
Crystal oscillator connected between XT and XTN
385
174.4
575
174.4
–
Ground
765
174.4
O
Output. Output frequency. High impedance in standby mode
757.6
1017.6
–
Supply voltage
165.4
1014.6
BLOCK DIAGRAM
VDD VSS
XTN
CG
CD
Rf
XT
Q
INHN
Substrate potential: VDD
NIPPON PRECISION CIRCUITS INC.—2
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