CF5012ANB 查看數據表（PDF） - Nippon Precision Circuits
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CF5012ANB Datasheet PDF : 7 Pages
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CF5012 series
SPECIFICATIONS
Absolute Maximum Ratings
VSS = 0V
Parameter
Supply voltage range
Input voltage range
Output voltage range
Operating temperature range
Storage temperature range
Output current
Symbol
V DD
V IN
VOUT
Topr
T stg
I OUT
Condition
Recommended Operating Conditions
VSS = 0V, f ≤ 45MHz, CL = 15pF unless otherwise noted.
Parameter
Symbol
Condition
Supply voltage
V DD
Input voltage
V IN
Operating temperature
TOPR
Electrical Characteristics
VDD = 2.7 to 3.6V, VSS = 0V, Ta = −20 to +80°C unless otherwise noted.
Parameter
Symbol
Condition
HIGH-level output voltage
LOW-level output voltage
Output leakage current
HIGH-level input voltage
LOW-level input voltage
Current consumption
INHN pull-up resistance
Feedback resistance
Built-in capacitance
VOH Q: Measurement cct 1, VDD = 2.7V, IOH = 8mA
VOL Q: Measurement cct 2, VDD = 2.7V, IOL = 8mA
IZ
Q: Measurement cct 2, INHN = LOW,
VDD = 3.6V
VOH = VDD
VOL = VSS
VIH INHN
VIL INHN
I DD
Measurement cct 3, load cct 1, INHN = open, CL = 15pF,
f = 40MHz
RUP Measurement cct 4
Rf Measurement cct 5
CG
Design value, determined by the internal wafer pattern
CD
Rating
Unit
−0.5 to +7.0
V
−0.5 to VDD + 0.5
V
−0.5 to VDD + 0.5
V
−40 to +85
°C
−65 to +150
°C
25
mA
Rating
Unit
min
typ
max
2.7
–
3.6
V
VSS
–
VDD
V
−20
–
+80
°C
Rating
Unit
min
typ
max
2.2
2.4
–
V
–
0.3
0.4
V
–
–
10
µA
–
–
10
µA
0.7V DD
–
–
V
–
–
0.3V DD
V
–
6.5
13
mA
40
100
250
kΩ
2.63
3.1
3.57
kΩ
7
8
9
pF
13
15
17
pF
NIPPON PRECISION CIRCUITS INC.—3
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