Philips Semiconductors
GSM/DCS/PCS power amplifier
Preliminary specification
CGY2014ATW
FEATURES
• Operates at 3.6 V battery supply voltage
• Power Amplifier (PA) output power:
35 dBm in GSM band and 32.5 dBm in DCS/PCS band
• Input power: 5 dBm in GSM band and DCS/PCS band
• Wide operating temperature range from
Tamb = −20 to +85 °C
• HTSSOP20 exposed die pad package.
APPLICATIONS
• Dual-band systems: Low Band (LB) from
880 to 915 MHz hand-held transceivers for E-GSM and
High Band (HB) from 1710 to 1910 MHz for DCS/PCS
applications.
GENERAL DESCRIPTION
The CGY2014ATW is a dual-band GSM/DCS/PCS GaAs
Monolithic Microwave Integrated Circuit (MMIC) power
amplifier. The circuit is specifically designed to operate at
3.6 V battery supply voltage.
The power amplifier requires only a 30 dB harmonic
low-pass filter to comply with the transmit spurious
specification.
The voltages applied on pins VDD (drain) control the power
of the power amplifier and enable it to be switched off.
QUICK REFERENCE DATA
SYMBOL
VDD
IDD(LB)
Po(LB)(max)
IDD(HB)
Po(HB)(max)
Tamb
PARAMETER
supply voltage
GSM positive peak supply current
maximum output power in GSM band
DCS/PCS positive peak supply current
maximum output power in DCS/PCS band
ambient temperature
MIN.
−
−
34.5
−
32
−20
TYP.
3.5
2
35
1.5
32.5
−
MAX.
5.2
−
−
−
−
+85
UNIT
V
A
dBm
A
dBm
°C
ORDERING INFORMATION
TYPE
NUMBER
CGY2014ATW
NAME
HTSSOP20
PACKAGE
DESCRIPTION
plastic, heatsink thin shrink small outline package; 20 leads;
body width 4.4 mm
VERSION
SOT527-1
2000 Nov 28
2