CGY2014ATW 查看數據表（PDF） - Philips Electronics

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CGY2014ATW

GSM/DCS/PCS power amplifier

Philips Electronics 

Philips Semiconductors

GSM/DCS/PCS power amplifier

Preliminary specification

CGY2014ATW

FEATURES

• Operates at 3.6 V battery supply voltage

• Power Amplifier (PA) output power:

35 dBm in GSM band and 32.5 dBm in DCS/PCS band

• Input power: 5 dBm in GSM band and DCS/PCS band

• Wide operating temperature range from

Tamb = −20 to +85 °C

• HTSSOP20 exposed die pad package.

APPLICATIONS

• Dual-band systems: Low Band (LB) from

880 to 915 MHz hand-held transceivers for E-GSM and

High Band (HB) from 1710 to 1910 MHz for DCS/PCS

applications.

GENERAL DESCRIPTION

The CGY2014ATW is a dual-band GSM/DCS/PCS GaAs

Monolithic Microwave Integrated Circuit (MMIC) power

amplifier. The circuit is specifically designed to operate at

3.6 V battery supply voltage.

The power amplifier requires only a 30 dB harmonic

low-pass filter to comply with the transmit spurious

specification.

The voltages applied on pins VDD (drain) control the power

of the power amplifier and enable it to be switched off.

QUICK REFERENCE DATA

SYMBOL

VDD

IDD(LB)

Po(LB)(max)

IDD(HB)

Po(HB)(max)

Tamb

PARAMETER

supply voltage

GSM positive peak supply current

maximum output power in GSM band

DCS/PCS positive peak supply current

maximum output power in DCS/PCS band

ambient temperature

MIN.

−

−

34.5

−

32

−20

TYP.

3.5

2

35

1.5

32.5

−

MAX.

5.2

−

−

−

−

+85

UNIT

V

A

dBm

A

dBm

°C

ORDERING INFORMATION

TYPE

NUMBER

CGY2014ATW

NAME

HTSSOP20

PACKAGE

DESCRIPTION

plastic, heatsink thin shrink small outline package; 20 leads;

body width 4.4 mm

VERSION

SOT527-1

2000 Nov 28

2

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