CGY2030M/C1 查看數據表（PDF） - Philips Electronics

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CGY2030M/C1

DECT 500 mW power amplifier

Philips Electronics 

Philips Semiconductors

DECT 500 mW power amplifier

Product specification

CGY2030M

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL

PARAMETER

CONDITIONS

VDD

VDD − VGG

Tj(max)

Ptot

Tstg

operating supply voltage

voltage difference between supply voltage

and gate bias voltage

maximum operating junction temperature

total power dissipation

IC storage temperature

no input signal

MIN.

−

−

−

−

−55

TYP.

−

−

−

−

−

MAX.

5.2

8

UNIT

V

V

150

°C

400

mW

+125 °C

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

Rth j-a

thermal resistance from junction to ambient in free air

VALUE

145

UNIT

K/W

HANDLING

Do not operate or store near strong electrostatic fields. Meets class 1 ESD test requirements [Human Body Model

(HBM)], in accordance with “MIL STD 883C - method 3015”.

DC CHARACTERISTICS

VDD = 3.2 V; Tamb = 25 °C; unless otherwise specified.

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

Pins RFO/VDD4, VDD3, VDD2 and VDD1

VDD

positive supply voltage

IDD

positive peak supply current

Pins VGG1 and VGG2; in mode 2

VGG1

VGG2

IGG(tot)

bias voltage for input stages

bias voltage for output stage

total gate peak current

note 1

note 1

note 2

2.6

3.2

4.2

−

400

500

−

−1.2

−

−

−2.0

−

−1

−

+1

Notes

1. Negative voltages VGG1 and VGG2 must be applied before supply voltage VDD.

2. Due to non linear effects at high power levels, the gate current can be either negative or positive.

UNIT

V

mA

V

V

mA

1997 Jan 17

4

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