Philips Semiconductors
Product specification
870 MHz, 21.5 dB gain push-pull amplifier
CGY887
CHARACTERISTICS
Bandwidth 40 to 870 MHz; VB = 24 V; Tmb = 35 °C; ZS = ZL = 75 Ω
SYMBOL
PARAMETER
CONDITIONS
MIN. MAX. UNIT
Gp
SL
FL
s11
s22
s21
CTB
Xmod
CSO
d2
Vo
power gain
slope straight line
flatness straight line
input return losses
output return losses
phase response
composite triple beat
cross modulation
composite second order
distortion
second order distortion
output voltage
f = 45 MHz
21.2
f = 870 MHz
22
f = 45 to 870 MHz; note 1
0.6
f = 45 to 100 MHz
−
f = 100 to 800 MHz
−
f = 800 to 870 MHz
−
f = 45 to 80 MHz
20
f = 80 to 160 MHz
20
f = 160 to 320 MHz
20
f = 320 to 550 MHz
20
f = 550 to 650 MHz
19
f = 650 to 750 MHz
17
f = 750 to 870 MHz
17
f = 45 to 80 MHz
21
f = 80 to 160 MHz
19
f = 160 to 320 MHz
17
f = 320 to 550 MHz
16
f = 550 to 650 MHz
16
f = 650 to 750 MHz
16
f = 750 to 870 MHz
16
f = 50 MHz
−45
79 chs flat; Vo = 44 dBmV; fm = 547.25 MHz
−
112 chs flat; Vo = 44 dBmV; fm = 745.25 MHz
−
132 chs flat; Vo = 42 dBmV; fm = 859.25 MHz
−
79 chs flat; Vo = 44 dBmV; fm = 55.25 MHz
−
112 chs flat; Vo = 44 dBmV; fm = 55.25 MHz
−
132 chs flat; Vo = 42 dBmV; fm = 55.25 MHz
−
79 chs flat; Vo = 44 dBmV; fm = 548.5 MHz
−
CSOsum 112 chs flat; Vo = 44 dBmV; fm = 746.5 MHz −
CSOdif 112 chs flat; Vo = 44 dBmV; fm = 150 MHz −
CSOsum 132 chs flat; Vo = 42 dBmV; fm = 860.5 MHz −
CSOdif 132 chs flat; Vo = 42 dBmV; fm = 150 MHz −
note 2
−
note 3
−
note 4
−
dim = −60 dB; note 5
64
dim = −60 dB; note 6
63
dim = −60 dB; note 7
62
21.8
23
1.4
±0.3
±0.5
±0.3
−
−
−
−
−
−
−
−
−
−
−
−
−
−
+45
−57
−55
−55
−53
−50
−52
−60
−55
−65
−55
−65
−58
−57
−57
−
−
−
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
deg
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dBmV
dBmV
dBmV
2002 Jun 27
3