CHA2090-99F 查看數據表（PDF） - United Monolithic Semiconductors
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CHA2090-99F Datasheet PDF : 8 Pages
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CHA2090
17-24GHz Low Noise Amplifier
Main Characteristics
Tamb = +25°C, Vd=4.5V, Pads B,D,E=GND
Symbol
Parameter
Min Typ Max Unit
Fop Operating frequency range
17
24 GHz
NF Noise figure (1)
2
3
dB
G
Gain (1)
19
23
dB
Pout Pout -1dB gain compression
10
dBm
VSWRin Input VSWR (1)
2.0:1 2.5:1
VSWRout Output VSWR (1)
2.0:1 2.5:1
Vdd Positive Drain voltage (2)
4.5 5.0
V
(1) These values are representative of on-wafer measurements that are made without bonding wires
at the RF ports. When the chip is attached with typical 0.15nH input and output bonding wires, the
indicated parameter values should be improved.
(2) See chip biasing option page 7/8.
Absolute Maximum Ratings (1)
Tamb = +25°C
Symbol
Parameter
Values
Unit
Vd
Drain bias voltage (3)
5.5
V
Pin
Maximum peak input power overdrive (2)
+15
dBm
Top Operating temperature range
-40 to +85
°C
Tstg Storage temperature range
-55 to +125
°C
(1) Operation of this device above anyone of these parameters may cause permanent damage.
(2) Duration < 1s.
(3) See chip biasing option page 7/8.
Ref. : DSCHA20909347 – 13 Dec. 99
2/8
Specifications subject to change without notice
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Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
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