CHA2092B 查看數據表（PDF） - United Monolithic Semiconductors
零件编号
产品描述 (功能)
生产厂家
CHA2092B Datasheet PDF : 6 Pages
| |||
CHA2092b
18-32GHz Low Noise Amplifier
Electrical Characteristics
Tamb = +25°C, Vds = 3.5V; Ids=60mA
Symbol
Parameter
Fop Operating frequency range (1)
Min Typ Max Min Typ Max Unit
20
28 18
32 GHz
G
Small signal gain (1)
18 22
17 22
dB
∆G
Small signal gain flatness (1)
±1.5
±2.5
dB
∆Gsb Gain flatness over 40MHz
0.5
0.5 dBpp
Is
Reverse isolation (1)
25 30
25 30
dB
P1dB Output power at 1dB gain compression (3)
8
10
8 10
dBm
VSWRin Input VSWR (1)
2.5:1 3.0:1
2.5:1 3.5:1
VSWRout Output VSWR (1)
18-20GHz
NF Noise figure (2) 20-28GHz
28-32GHz
Vd
DC Voltage
Vd
Vgs1,Vgs2&3
2.5:1 3.0:1
2.5 3.5
3.5 4.5
-0.5
2.5:1 3.5:1
2.5 4
2.5 3.5 dB
2.5 3.5
3.5 4.5 V
-0.5
V
Id
Bias current (2)
60 100
60 100 mA
(1)These values are representative of on-wafer measurements that are made without bonding
wires at the RF ports.
(2) 60 mA is the typical bias current used for on wafer measurements, with Vgs1 and Vgs2&3
connected together. For optimum noise figure, the bias current could be reduced down to
50 mA, adjusting the Vgs1 voltage.
(3) Ids=90mA
Absolute Maximum Ratings
Tamb. = 25°C (1)
Symbol
Parameter
Values
Unit
Vd
Drain bias voltage
5.0
V
Id
Drain bias current
120
mA
Vg
Gate bias voltage
-2.0 to +0.4
V
Pin
Maximum peak input power overdrive (2)
+15
dBm
Ta
Operating temperature range
-40 to +85
°C
Tstg
Storage temperature range
-55 to +155
°C
(1) Operation of this device above anyone of these parameters may cause permanent damage.
(2) Duration < 1s.
Ref. : DSCHA20921233 21-August-01
2/6
Specifications subject to change without notice
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Share Link: 