CHA5294-99F/00(2006) 查看數據表（PDF） - United Monolithic Semiconductors
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CHA5294-99F/00 Datasheet PDF : 6 Pages
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CHA5294
30-40GHz Medium Power Amplifier
Electrical Characteristics on wafer
Tamb = +25°C
Symbol
Parameter
Fop Operating frequency range (1)
Min Typ Max Unit
30
40
GHz
G
Small signal gain (1)
24
dB
∆G
Small signal gain flatness (1)
±1.5
dB
Is
Reverse isolation
40
dB
P1dB Pulsed output power at 1dB compression (1)
24
dBm
P03 Output power at 3dB gain compression (1)
25
dBm
IP3 Output Intercept point 3rd order
32
dBm
VSWRin Input VSWR (1)
2.0:1
VSWRout Output VSWR(1)
4.0:1
Vd
Drain bias DC voltage
4
V
Id
Bias current @ small signal
500
650
mA
(1) These values are representative for pulsed on-wafer measurements that are made without
bonding wires at the RF ports.
Absolute Maximum Ratings
Tamb. = 25°C (1)
Symbol
Parameter
Values
Unit
Vd
Maximum Drain bias voltage with Pin max=0dBm
+4.5
V
Id
Drain bias current with Vd=4V
750
mA
Vg
Gate bias voltage
-2 to +0.4
V
Vdg
Maximum drain to gate voltage (Vd - Vg)
+6.0
V
Pin
Maximum input power overdrive (2)
+3.0
dBm
Tch
Maximum channel temperature
+175
°C
Ta
Operating temperature range
-40 to +80
°C
Tstg
Storage temperature range
-55 to +125
°C
(1) Operation of this device above anyone of these parameters may cause permanent damage.
(2) Duration < 1s.
Ref. : DSCHA52946237 - 25 Aug 06
2/6
Specifications subject to change without notice
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
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