CHA5294 查看數據表（PDF） - United Monolithic Semiconductors
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CHA5294 Datasheet PDF : 6 Pages
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CHA5294
30-40GHz Medium Power Amplifier
Electrical Characteristics on wafer (1)
Tamb = +25°C
Symbol
Parameter
Fop
Operating frequency range
Min Typ Max Unit
30
40 GHz
G
Small signal gain from 30 to 34GHz
from 34 to 40GHz
∆G
Small signal gain flatness
24.5
dB
23
±1.5
dB
Is
Reverse isolation
40
dB
P1dB Pulsed output power at 1dB compression from 30 to 34GHz
23
from 34 to 40GHz
22
Psat Saturated power from 30 to 34GHz
24.5
from 34 to 40GHz
23
dBm
dBm
IP3
Output Intercept point 3rd order from 30 to 34GHz
from 34 to 40GHz
30
dBm
28
VSWRin Input VSWR
2.0:1
VSWRout Output VSWR
4.0:1
Vd
Drain bias DC voltage
3.5
V
Id
Bias current @ small signal
500
650 mA
(1) These values are representative for pulsed on-wafer measurements that are made without
bonding wires at the RF ports.
Absolute Maximum Ratings
Tamb. = 25°C (1)
Symbol
Parameter
Values
Unit
Vd
Maximum Drain bias voltage with Pin max= -2dBm
+4.0
V
Id
Drain bias current with Vd=3.5V in small signal
700
mA
Vg
Gate bias voltage
-2 to +0.4
V
Pin
Maximum peak input power overdrive with Vd=3.5V (2)
+6.0
dBm
Tch
Maximum channel temperature
+175
°C
Ta
Operating temperature range
-40 to +80
°C
Tstg
Storage temperature range
-55 to +125
°C
(1) Operation of this device above anyone of these parameters may cause permanent damage.
(2) Duration < 1s.
Ref. : DSCHA52948205 - 23 Jul 08
2/6
Specifications subject to change without notice
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
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