CHA7012 查看數據表（PDF） - United Monolithic Semiconductors

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产品描述 (功能)

生产厂家

CHA7012

X-band HBT High Power Amplifier

United Monolithic Semiconductors 

X-band High Power Amplifier

CHA7012

Typical measured characteristics

Measurements on Jig

Vc=7.5V, VTTL=5V, Ic (Quiescent) = 1.9A, Pulse width=100µs, Duty cycle = 20%

30

28

26

24

22

20

18

16

+20°C

14

+80°C

-40°C

12

10

8.5 8.7 8.9 9.1 9.3 9.5 9.7 9.9 10.1 10.3 10.5 10.7 10.9 11.1

Frequency (GHz)

Linear gain versus frequency and temperature

42

41

40

39

38

37

+20°C

36

+80°C

35

-40°C

34

33

32

8.5 8.7 8.9 9.1 9.3 9.5 9.7 9.9 10.1 10.3 10.5 10.7 10.9 11.1

Frequency (GHz)

Output Power @ 3dBc versus frequency and temperature

Ref. : DSCHA70129082- 23 March 09

3/10

Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE

Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09

Specifications subject to change without notice

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