CM1233-08DE 查看數據表（PDF） - ON Semiconductor

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CM1233-08DE

PicoGuard XS® ESD Clamp Array For High Speed Data Line Protection

ON Semiconductor 

CM1233

ELECTRICAL OPERATING CHARACTERISTICS (SEE NOTE 1)

SYMBOL PARAMETER

VIN

I/O Voltage Relative to GND

IIN

Continuous Current through signal pins

(IN to OUT) 1000 Hr

CONDITIONS

IF

Channel Leakage Current

TA = 25°C; VIN = 5V

VESD ESD Protection - Peak Discharge Voltage

at any channel input, in system:

Contact discharge per IEC 61000-4-2

Standard

TA = 25°C

IRES

Residual ESD Peak Current on RDUP

IEC 61000-4-2 8kV;

(Resistance of Device Under Protection) RDUP = 5Ω TA = 25°C;

See Figure 6

VCL

Channel Clamp Voltage

IPP = 1A, TA = 25°C,

(Channel clamp voltage per IEC 61000-4- tP = 8/20µS

5 Standard)

Positive Transients

Negative Transients

RDYN Dynamic Resistance

Positive Transients

Negative Transients

IPP = 1A, TA = 25ºC

,

tP = 8/20µS

Zo

Differential Channels pair characteristic TR = 200ps

impedance

MIN TYP MAX UNITS

-0.5

5.5

V

100

mA

±0.1 ±1.0 µA

±8

kV

3.2

A

+10

V

–1.8

V

0.9

Ω

0.55

Ω

100

Ω

∆Zo Channel-to-Channel Impedance Match

(Differential)

TR = 200ps

2

%

Z

CHANNEL

Individual Channel Characteristic Imped-

ance in Single-ended Connection

TR = 200ps

50

Ω

∆ZCHANNEL Channel-to-Channel Impedance Match

(Individual)

TR = 200ps

2

%

Note 1: All parameters specified at TA = –40°C to +85°C unless otherwise noted.

Rev. 2 | Page 8 of 13 | www.onsemi.com

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