CM1236-08 查看數據表（PDF） - ON Semiconductor

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CM1236-08

PicoGuard XS® ESD Clamp Array For High Speed Data Line Protection

ON Semiconductor 

CM1236

ELECTRICAL OPERATING CHARACTERISTICS (SEE NOTE 1)

SYMBOL PARAMETER

VIN

I/O Voltage Relative to GND

IIN

Continuous Current through signal pins

(IN to OUT) 1000 Hr

CONDITIONS

IF

Channel Leakage Current

TA = 25°C; VN = 0V, VTEST = 5V

VESD ESD Protection - Peak Discharge Voltage

at any channel input, in system:

Contact discharge per IEC 61000-4-2

Standard

TA = 25°C

IRES

Residual ESD Peak Current on RDUP

IEC 61000-4-2 8kV;

(Resistance of Device Under Protection) RDUP = 5Ω TA = 25°C

MIN TYP MAX UNITS

-0.5

5.5

V

100

mA

±0.1 ±1.0 µA

±8

kV

3.0

A

VCL

Channel Clamp Voltage

(Channel clamp voltage per

IEC 61000-4-5 Standard)

Positive Transients

Negative Transients

RDYN Dynamic Resistance

Positive Transients

Negative Transients

IPP = 1A, TA = 25°C,

tP = 8/20µS;

IPP = 1A, TA = 25ºC;

tP = 8/20µS

ZTDR

Differential Impedance

TDR excursion from 100Ω

characteristic impedance trans-

mission line;

TR = 200ps; Note 2 and Note 3

Zo

Differential Channels pair characteristic TR = 200ps;

impedance

Note 2 and Note 3

+9.2

V

-1.6

V

0.6

Ω

0.5

Ω

97

107

Ω

100

Ω

∆Zo Channel-to-Channel Impedance Match (Dif- TR = 200ps; TA = 25ºC

ferential)

;

Note 2 and Note 3

2

%

Note 1: All parameters specified at TA = –40°C to +85°C unless otherwise noted.

Note 2: Impedance values for deviation from continuous 100Ω uncompensated differential microstrip, with typical layout as

measured via TDR with 200ps effective incident risetime. See Figure 7.

Rev. 3 | Page 8 of 14 | www.onsemi.com

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