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CM1418-02CP 查看數據表(PDF) - ON Semiconductor

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CM1418-02CP Datasheet PDF : 10 Pages
1 2 3 4 5 6 7 8 9 10
CM1418
ELECTRICAL OPERATING CHARACTERISTICS (SEE NOTE 1)
SYMBOL PARAMETER
L
Inductance
R
DC Channel Resistance
CTOT
Total Channel Capacitance
CONDITIONS
2.5V dc, 1MHz, 30mV ac,
MIN TYP
3.0
0.28
187 234
MAX
0.35
281
UNITS
nH
Ω
pF
C
Capacitance C
1
1
2.5V dc, 1MHz, 30mV ac
93 117
140
pF
V
Stand-off Voltage
ST
I
Diode Leakage Current
LEAK
V
Signal Clamp Voltage
SIG
Positive Clamp
Negative Clamp
I = 10μA
V = 3.3V
IN
I = 10mA
LOAD
I = -10mA
LOAD
VESD In-system ESD Withstand Voltage
Note 2
a) Human Body Model, MIL-STD-883,
Method 3015
b) Contact Discharge per IEC 61000-4-2
Level 4
RDYN
Dynamic Resistance
Positive
Negative
fC
Cut-off frequency
Z
SOURCE
=
50Ω,
Z
LOAD
=
50Ω
L = 3nH, C = 117pF
6.0
V
0.1
1.0
μA
5.6 6.8
9.0
V
-9.0 -6.8
-5.6
V
±30
kV
±30
kV
0.95
Ω
0.90
Ω
22
MHz
Note 1: TA=25°C unless otherwise specified.
Note 2: ESD applied to input and output pins with respect to GND, one at a time.
Rev. 3 | Page 4 of 10 | www.onsemi.com

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