CM1636 查看數據表（PDF） - ON Semiconductor

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CM1636

4-, 6- and 8-Channel EMI Filter Arrays with ESD Protection

ON Semiconductor 

CM1636

ELECTRICAL OPERATING CHARACTERISTICS (SEE NOTE 1)

SYMBOL PARAMETER

R

Resistance

CONDITIONS

MIN

160

C

Total Channel Capacitance

TOTAL

At 2.5VDC Reverse Bias, 1MHz, 24

30mVAC

C

Capacitance

At 2.5V DC, 1MHz, 30mV AC

VDIODE

ILEAK

Diode Standoff Voltage

Diode Leakage Current (reverse

bias)

I = 10μA

DIODE

VDIODE = 3.3V

VSIG

Signal Voltage

Positive Clamp

ILOAD = 10mA

5.6

Negative Clamp

ILOAD = -10mA

-0.4

V

In-system ESD Withstand Voltage Notes 2

ESD

a) Human Body Model, MIL-STD-

±30

883, Method 3015

b) Contact Discharge per IEC

±15

61000-4-2 Level 4

f

C

A

1GHz

Cut-off Frequency

Z =50Ω, Z =50Ω

SOURCE

LOAD

R = 200Ω, C = 15pF;

Note 3

Absolute Attenuation @ 1GHz from Z = 50Ω, Z = 50Ω,

SOURCE

LOAD

0dB Level

DC Bias = 0V; Notes 1 and 3

A

Absolute Attenuation @ 800MHz to

800MHz - 6GHz

ZSOURCE = 50Ω, Z LOAD = 50Ω,

6GHz from 0dB Level

DC Bias = 0V; Notes 1 and 35

TYP MAX UNITS

200

240

Ω

30

36

pF

15

pF

6.0

V

0.1

1

μA

6.8

V

-0.8

V

kV

kV

100

MHz

35

dB

30

dB

Note 1: TA=25°C unless otherwise specified.

Note 2: ESD applied to input and output pins with respect to GND, one at a time.

Note 3: Attenuation / RF curves characterized by a network analyzer using microprobes.

Rev. 2 | Page 5 of 22 | www.onsemi.com

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