GS8180D18D-333I 查看數據表（PDF） - Giga Semiconductor
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GS8180D18D-333I Datasheet PDF : 27 Pages
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Preliminary
GS8180D18D-333/300/250/200
Undershoot Measurement and Timing
VIH
VSS
50%
VSS – 1.0 V
20% tKHKH
Capacitance
(TA = 25oC, f = 1 MHZ, VDD = 3.3 V)
Parameter
Input Capacitance
Output Capacitance
Note: This parameter is sample tested.
Symbol
CIN
COUT
Overshoot Measurement and Timing
VDD + 1.0 V
50%
20% tKHKH
VDD
VIL
Test conditions
VIN = 0 V
VOUT = 0 V
Typ. Max. Unit
4
5
pF
6
7
pF
Package Thermal Characteristics
Rating
Layer Board
Symbol
Max
Unit Notes
Junction to Ambient (at 200 lfm)
Junction to Ambient (at 200 lfm)
Junction to Case (TOP)
single
four
—
RΘJA
RΘJA
RΘJC
TBD
°C/W
1,2
TBD
°C/W
1,2
TBD
°C/W
3
Notes:
1. Junction temperature is a function of SRAM power dissipation, package thermal resistance, mounting board temperature,
ambient. Temperature air flow, board density, and PCB thermal resistance.
2. SCMI G-38-87
3. Average thermal resistance between die and top surface, MIL SPEC-883, Method 1012.1
AC Test Conditions
Parameter
Input high level
Input low level
Max. input slew rate
Input reference level
Output reference level
Notes: Test conditions as specified with output loading as shown unless otherwise noted.
Conditions
VDDQ
0V
2 V/ns
VDDQ/2
VDDQ/2
Rev: 2.00f 6/2002
14/27
© 2002, Giga Semiconductor, Inc.
Specifications cited are design targets and are subject to change without notice. For latest documentation contact your GSI representative.
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