GS8180D18D-333I 查看數據表（PDF） - Giga Semiconductor

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GS8180D18D-333I

18Mb Σ2x2B4 SigmaQuad SRAM

Giga Semiconductor 

Preliminary

GS8180D18D-333/300/250/200

Operating Currents

-333

-300

-250

Parameter Org Symbol

0°C to –40°C to 0°C to –40°C to 0°C to –40°C to

70°C +85°C 70°C +85°C 70°C +85°C

Test Conditions

IDD 400 mA TBD mA 375 mA TBD mA 330 mA TBD mA

R and W ≤ VIL Max.

Operating

Current

x18

tKHKH ≥ tKHKH Min.

All other inputs

IDDQ 95 mA TBD mA 85 mA TBD mA 70 mA TBD mA VIN ≤ VIL Max. or VIN ≥ VIH Min.

Chip Disable

Current

x18

ISB1

ISBQ1

155 mA

5 mA

TBD mA

TBD mA

150 mA

5 mA

TBD mA

TBD mA

140 mA

5 mA

TBD mA

TBD mA

R and W ≥ VIH Min.

tKHKH ≥ tKHKH Min.

All other inputs

VIN ≤ VIL Max. or VIN ≥ VIH Min.

Note: Power measured with output pins floating.

Rev: 2.00f 6/2002

16/27

© 2002, Giga Semiconductor, Inc.

Specifications cited are design targets and are subject to change without notice. For latest documentation contact your GSI representative.

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