TC1427COA 查看數據表（PDF） - TelCom Semiconductor Inc => Microchip

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TC1427COA

1.2A DUAL HIGH-SPEED MOSFET DRIVERS

TelCom Semiconductor Inc => Microchip 

TC1426

TC1427

TC1428

1.2A DUAL HIGH-SPEED MOSFET DRIVERS

ABSOLUTE MAXIMUM RATINGS*

Power Dissipation (TA ≤ 70°C)

Plastic DIP ...........................................................730W

SOIC ................................................................ 470 mW

Derating Factor

Plastic DIP ..................................................... 8 mW/°C

SOIC .............................................................. 4 mW/°C

Supply Voltage ............................................................18V

Input Voltage, Any Terminal .. (VDD + 0.3V) to (GND – 0.3V)

Operating Temperature : C Version .............. 0°C to +70°C

E Version ......... – 40°C to +85°C

Maximum Chip Temperature ................................. +150°C

Storage Temperature ............................. +65°C to +150°C

Lead Temperature (Soldering ,10 sec) ................. +300°C

*Stresses above those listed under "Absolute Maximum Ratings" may

cause permanent damage to the device. These are stress ratings only, and

functional operation of the device at these or any other conditions above

those indicated in the operational sections of the specifications is not

implied. Exposure to absolute maximum rating conditions for extended

periods may affect device reliability.

ELECTRICAL CHARACTERISTICS: TA = 25°C with 4.5V ≤ VDD+ ≤ 16V unless otherwise specified.

Symbol

Input

VIH

VIL

IIN

Output

VOH

VOL

RO

Parameter

Input Current

High Output Voltage

Low Output Voltage

Output Resistance

IPK

Peak Output Current

I

Latch-Up Current

Switching Time (Note 1)

tR

Rise Time

tF

Fall Time

tD1

Delay Time

tD2

Delay Time

Power Supply

IS

Power Supply Current

Note: 1. Switching times guaranteed by design.

Test Conditions

Min

Typ

Max

Logic 1, Input Voltage

Logic 0, Input Voltage

0V ≤ VIN ≤ VDD

3

—

—

—

–1

—

Test Figures 1 and 2

VDD – 0.025 —

Test Figures 1 and 2

—

—

VIN = 0.8V,

IOUT = 10 mA, VDD = 16V

VIN = 3V,

IOUT = 10 mA, VDD = 16V

—

12

—

8

—

1.2

Withstand Reverse Current

> 500

—

—

0.8

1

—

0.025

18

12

—

—

Test Figures 1 and 2

Test Figures 1 and 2

Test Figures 1 and 2

Test Figures 1 and 2

—

—

35

—

—

25

—

—

75

—

—

75

VIN = 3V (Both Inputs)

VIN = 0V (Both Inputs)

—

—

9

—

—

0.5

Unit

V

V

µA

V

V

Ω

A

mA

nsec

nsec

nsec

nsec

mA

4-208

TELCOM SEMICONDUCTOR, INC.

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