CMS17 查看數據表（PDF） - Toshiba
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CMS17 Datasheet PDF : 5 Pages
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TOSHIBA Schottky Barrier Diode
CMS17
CMS17
Switching Mode Power Supply Applications
Portable Equipment Battery Applications
• Forward voltage: VFM = 0.48 V (max)
• Average forward current: IF (AV) = 2.0 A
• Repetitive peak reverse voltage: VRRM = 30 V
• Suitable for compact assembly due to a small surface-mount package:
“M−FLATTM” (Toshiba package name)”
Absolute Maximum Ratings (Ta = 25°C)
Unit: mm
Characteristic
Symbol
Rating
Unit
Repetitive peak reverse voltage
Average forward current
Nonrepetitive peak surge current
Junction temperature
Storage temperature range
VRRM
IF (AV)
IFSM
Tj
Tstg
30
V
2.0 (Note 1) A
30 (50 Hz)
A
−40~150
°C
−40~150
°C
Note 1:
Note 2:
Ta = 77°C
Device mounted on a ceramic board
Board size: 50 mm × 50 mm
JEDEC
⎯
Soldering size: 2 mm × 2 mm
JEITA
⎯
Board thickness: 0.64 t
Rectangular waveform (α = 180°), VR = 15 V
TOSHIBA
3-4E1A
Using continuously under heavy loads (e.g. the application of
Weight: 0.023 g (typ.)
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristic
Peak forward voltage
Peak repetitive reverse current
Junction capacitance
Thermal resistance
(junction to ambient)
Thermal resistance
(junction to lead)
Symbol
VFM (1)
VFM (2)
IRRM (1)
IRRM (2)
Cj
Rth (j-a)
Rth (j-ℓ)
Test Condition
Min Typ. Max Unit
IFM = 1.0 A (pulse test)
⎯
IFM = 2.0 A (pulse test)
⎯
VRRM = 5 V (pulse test)
⎯
VRRM = 30 V (pulse test)
⎯
VR = 10 V, f = 1.0 MHz
⎯
Device mounted on a ceramic board
(board size: 50 mm × 50 mm)
(soldering land: 2 mm × 2 mm)
⎯
(board thickness: 0.64 t)
Device mounted on a glass-epoxy board
(board size: 50 mm × 50 mm)
(soldering land: 6 mm × 6 mm)
⎯
(board thickness: 1.6 t)
Device mounted on a glass-epoxy board
(board size: 50 mm × 50 mm)
(soldering land: 2.1 mm × 1.4 mm)
⎯
(board thickness: 1.6 t)
⎯
⎯
0.42 ⎯
V
0.45 0.48
0.8
⎯
μA
10 100
90
⎯
pF
⎯
60
⎯
135 °C/W
⎯
210
⎯
16 °C/W
Start of commercial production
2004-09
1
2013-11-01
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